Data for reference igarashi-jjap-27-790

Heteroepitaxial growth of GaN 1-xP x (x≤0.06) on sapphire substrates

O. Igarashi

Japanese Journal of Applied Physics 27, 790 (1988).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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