Data for reference koide-jjap-27-1156

Effect of AlN buffer layer on AlGaN/α-Al2O3 heteroepitaxial growth by metalorganic vapor phase epitaxy

Y. Koide, N. Itoh, K. Itoh, N. Sawaki, I. Akasaki

Japanese Journal of Applied Physics 27, 1156 (1988).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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