Data for reference fujieda-jjap-26-2067

Growth characterization of low-temperature MOCVD GaN--Comparison between N2H4 and NH3

S. Fujieda, M. Mizuta, Y. Matsumoto

Japanese Journal of Applied Physics 26, 2067 (1987).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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