mizuta-jjap-25-l945

Data for reference mizuta-jjap-25-l945

Low temperature growth of GaN and AlN on GaAs using metalorganics and hydrazine

M. Mizuta, S. Fujieda, Y. Matsumoto, T. Kawamura

Japanese Journal of Applied Physics 25, L945 (1986).

This item is cited by the following items in the database:

GaN, AlN, and InN: A review
Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source

Contributed by S. Strite

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