Data for reference igarashi-jjap-24-l792

Epitaxial growth of GaN 1-xP x (x ≤ 0.04) on sapphire substrates

O. Igarashi, Y. Okada

Japanese Journal of Applied Physics 24, L792 (1985).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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