Data for reference matsubara-jjap-22-511

Film growth of GaN on a c-axis oriented ZnO film using reactive ionized-cluster beam technique and its application to thin film devices

K. Matsubara, T. Takagi

Japanese Journal of Applied Physics 22, 511 (1982).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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