Data for reference morita-jjap-20-17

Epitaxial growth of aluminum nitride on sapphire using metalorganic chemical vapor deposition

M. Morita, N. Uesugi, S. Isogai, K. Tsubouchi, N. Mikoshiba

Japanese Journal of Applied Physics 20, 17 (1981).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. MOVPE Growth and Structural Characterization of AlxGa1-xN

Contributed by S. Strite

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