Data for reference ogino-jjap-19-2395

Mechanism of yellow luminescence in GaN

T. Ogino, M. Aoki

Japanese Journal of Applied Physics 19, 2395 (1980).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Yellow Band and Deep levels in Undoped MOVPE GaN.
  3. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  4. Crystalline Structure changes in GaN Films Grown at Different Temperatures
  5. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  6. Yellow luminescence in Mg-doped GaN
  7. Temperature behaviour of the yellow emission in GaN
  8. New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN

Contributed by S. Strite

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