Data for reference wickenden-jhapltd-18-217

Development of Gallium Nitride Photoconductive Detectors

Dennis K. Wickenden, Zhenchun Huang, D. Brent Mott, Peter K. Shu

Johns Hopkins APL Technical Digest 18(2), 217 (1997).

The authors describe the properties of GaN photoconductive UV detectors and discuss possible NASA applications of these devices.

This item is cited by the following items in the database:

  1. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  2. Solar-Blind AlGaN Heterostructure Photodiodes

Contributed by A submitted manuscript, on Thursday, July 13, 2000 2:36:55 PM

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