1973

• Epitaxial growth and piezoelectric properties of AlN, GaN, and GaAs on sapphire or spinel

1974

• Some properties of InN films prepared by reactive evaporation

1975

• The structural and piezoelectric properties of epitaxial AlN on Al₂O₃
• Some properties of chemically vapor deposited films of Al _xO _yN _z on silicon

1977

• Characterization of GaN epitaxial layers using cathodoluminescence

1978

• Gallium nitride emitting devices preparation and properties
• Energy Bandgap and Lattice Constant Contours of III-V Quaternary Alloys of the Form A_xB_yC_zD or AB_xC_yD_z

1983

• Passivation of GaAs surfaces

1985

• MOCVD epitaxial growth of single crystal GaN, AlN and Al _xGa _1-xN

1989

• Auto lattice matching effect for AlInAs grown by MBE at high substrate temperature
• Characterization of Mg-doped InP grown by MOCVD using a bis(Methylcylopentadienyl) magnesium dopant source

1991

• Ultraviolet Photoluminescence from Undoped and Zn Doped AlxGa1-xN with x between 0 and 0.75

1992

• Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE
• Metalorganic Chemical Vapor Deposition Growth of High OPtical Quality and High Mobility GaN.

1994

• Gas Composition Dependence of Silicon Nitride Used as Gallium Diffusion Barrier During GaAs Molecular Beam Epitaxy Growth on Si Complementary Metal Oxide Semiconductor
• Optical Third Harmonic Investigations of Gallium Nitride Nucleation Layers on Sapphire
• Modulated Reflectance and Absorption Characterization of Single Crystal GaN Films
• Domain Epitaxial Growth of TiN/Si(001), TiN/GaAs(001), and Si/TiN/Si(001) Heterostructures by Laser Physical Vapor Deposition: Theory and Experiment

1995

• The Role of the Low Temperature Buffer Layer and Layer Thickness in the Optimization of OMVPE Growth of GaN on Sapphire
• The Effect of Organometallic Vapor Phase Epitaxial Growth Conditions on Wurtzite GaN Electron Transport Properties
• Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers
• Doping of Gallium Nitride Using Disilane
• A new buffer layer for MOCVD growth of GaN on sapphire
• Epitaxial Growth of Cubic GaN on (111) GaAs by Metalorganic Chemical Vapor Deposition
• Native defects and dopants in GaN studied through photoluminescence and optically detected magnetic resonance
• Valence Band Discontinuity Between GaN and AlN Measured by X-Ray Photoemission Spectroscopy
• Chemically Assisted Ion Beam Etching of Gallium Nitride
• A Microstructural Comparison of the Initial Growth of AlN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Deposition
• The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy
• High Quality GaN Heteroepitaxial Films Grown by MOCVD
• The Growth and Properties of Mixed Group V Nitrides
• The Effect of GaN and AlN Buffer Layers on GaN Film Properties Grown on Both C Plane and A Plane Sapphire
• Operation of a compactelectron cyclotron resonancesource for the growth of GaN by MBE

1996

• A study of parasitic reactions between NH₃ and TMGa or TMAl
• Structural Characterization of Bulk GaN crystals Grown Under High Hydrostatic Pressure
• Mass Spectroscopy Study of GaN Metalorganic Chemical Vapor Deposition
• Thermal expansion, molar volume and specific heat of diamond from 0 to 3000K
• Effect of Shroud Flow on High Quality InxGa1-xN Deposition in a production Scale Multi-wafer Rotating Disk reactor
• Electron Mobility in Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures and in Bulk GaN
• Real-Time Monitoring of the Surface Stoichiometry During Molecular Beam Epitaxy of Cubic GaN on (001)GaAs by RHEED
• MBE Growth and Properties of GaN and Al_xGa_1-xN on GaN/SiC Substrates
• Residual Impurities in GaN/Al2O3 Grown by Metalorganic Vapor Phase Epitaxy
• Cleaning of GaN Surfaces
• Estimated Phase Equilibria in the Transition Metal-Ga-N Systems:Consequences for Electrical Contacts to GaN
• Ohmic Contacts to n-Type GaN Using Pd/Al Metallization
• Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCl and H2/Cl2
• Schottky Barriers on n-GaN Grown on SiC
• Reactive Ion Etching of Gallium Nitride Films
• Ion Implantation and Rapid Thermal Processing of III-V Nitrides
• The Incorporation of Hydrogen into III-V Nitrides During Processing
• Magnetic Resonance Studies of GaN Based Light Emitting Diodes

1997

• Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
• The Effect of Substrate Surface Roughness on GaN Growth Using MOCVD Process
• Characterization of MOVPE-Grown (Al, In, Ga) N Heterostructures by Quantitative Analytical Electron Microscopy
• Stability and Interface Abruptness of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures Grown by OMVPE
• Nucleation and Growth Behavior for GaN Grown on (0001) Sapphire via Multistep Growth Approach
• Flow Modulation Epitaxy of Indium Gallium Nitride
• Al-Ga-In-Nitride Heterostructures: MOVPE Growth in Production Reactors and Characterization
• Electrical and Optical Properties of Oxygen Doped GaN Grown by MOCVD Using N₂O
• Plasma Characteristics and the Growth of Group III-Nitrides by Metalorganic Molecular Beam Epitaxy
• Effect of Dry Etching on Surface Properties of III-Nitrides
• The Role of Ion Characteristics in Determining the Structural and Electrical Quality of InN Grown by Metalorganic Molecular Beam Epitaxy
• Growth and characterization of GaN thin films on SiC SOI substrates
• Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates
• Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate
• Growth of GaBN Ternary Solutions by Organometallic Vapor Phase Epitaxy
• Effect of Structural Defects and Chemical Impurities on Hall Mobilities in Low Pressure MOCVD Grown GaN
• Gas-Source Molecular Beam Epitaxial Growth and Characterization of InN_xP_1-x on InP
• The Effect of Substrate Misorientation on the Optical, Structural, and Electrical Properties of GaN Grown on Sapphire by MOCVD
• Low Resistance Bilayer Nd/Al Ohmic Contacts on n-Type GaN
• Characterization of reactive ion etching-induced damage to n-GaN surfaces using Schottky diodes
• In Situ Control of GaN Growth by Molecular Beam Epitaxy
• Study of Indium droplets Formation on the InGaN Films by SIngle Crystal X-ray Difraction.
• Structure of GaN Films Grown by Molecular Beam Epitaxy on (0001) Sapphire
• MOVPE Growth and Optical Properties of GaN Deposited on c-Plane Sapphire
• Highly Anisotropic, Ultra-Smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma
• Characteristics of GaN Stripes Grown by Selective-Area Metalorganic Chemical Vapor Deposition
• Tunneling Current and electroluminescence in InGaN:Zn,Si/AlGaN/GaN blue liight emitting diodes
• Growth of Zinc-Blende GaN on GaAs (100) Substrates at High Temperature Using Low-Pressure MOVPE with a Low V/III Molar Ratio
• Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells
• Improvement of Metal-Semiconductor-Metal GaN Photoconductors
• Ion Implantation Doping of OMCVD Grown GaN
• Role of Interfacial-Charge in the Growth of GaN on 6H-SiC
• Growth of Thick GaN Films on RF Sputtered AlN Buffer Layer by Hydride Vapor Phase Epitaxy

1998

• Improved Sidewall Morphology on Dry Etched, SiO₂ Masked GaN Features,
• Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
• Metal contacts to n-type GaN
• The Effects of Reactive Ion Etching-Induced Damage on the Characteristics of Ohmic Contacts to n-Type GaN
• Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
• Dopant-selective photoenhanced wet etching of GaN
• Preparation of Atomically Flat Surfaces of Silicon Carbide Using Hydrogen Etching
• Antisite Arsenic Incorporation in the Low Temperature MBE of Gallium Arsenide: Physics and Modeling
• Antisite Arsenic Incorporation in the Low Temperature MBE of Gallium Arsenide: Physics and Modeling

1999

• Interfacial effects during GaN growth on 6H-SiC,
• Plasma Etch Induced Conduction Changes in GaN,
• Pendeo-Epitaxy- A New Approach for Lateral Growth of Gallium Nitride Films,

2000

• MOCVD Growth of Cubic GaN on 3C-SiC Deposited on Si(100) Substrates

2001

• Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

last updated Thursday, February 14, 2002 1:50:37 PM.
© 2001 The Materials Research Society