Data for reference lee-jem-30-162

Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

C. D. Lee, V. Ramachandran, A. Sagar, R. M. Feenstra, D. W. Greve, W. L. Sarney, L. Salamanca-Riba, D. C. Look, S. Bai, W. J. Choyke, R. P. Devaty

Journal of Electronic Materials 30, 162 (2001).

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This item is cited by the following items in the database:

  1. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by A submitted manuscript, on Wednesday, January 16, 2002 6:31:56 PM

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