Data for reference wei-jem-29-317MOCVD Growth of Cubic GaN on 3C-SiC Deposited on Si(100) Substrates
CH Wei, ZY Xie, LY Li, QM Yu, JH Edgar
Journal of Electronic Materials 29(3), 317 (2000).
The best condition for depositing cubic GaN on 3C-SiC/Si(100) are described.
Contributed by J.H. Edgar from drf-dhcp-44-087.engg.ksu.edu. on Monday, March 19, 2001 11:29:38 AM
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