Data for reference medelci-jem-29-1079

Etch Characteristics of GaN and BN Materials in Chlorine-Based Plasmas

N Medelci, A Tempez, D Starikov, N Badi, I Berishev, A Bensaoula

Journal of Electronic Materials 29(9), 1079 (2000).

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This item is cited by the following items in the database:

  1. Effect of Photo-Assisted RIE Damage on GaN

Contributed by A submitted manuscript, on Monday, July 14, 2003 3:30:33 PM

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