Data for reference torvik-jem-28-234

Interfacial effects during GaN growth on 6H-SiC,

J. T. Torvik, M. W. Leksono, J. I. Pankove, C. Heinlein, J. K. Grepstad, C. Magee

Journal of Electronic Materials 28(3), 234 (1999).

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This item is cited by the following items in the database:

  1. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

Contributed by A submitted manuscript, on Wednesday, April 21, 1999 1:08:04 PM

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