Data for reference ramachandran-jem-27-308

Preparation of Atomically Flat Surfaces of Silicon Carbide Using Hydrogen Etching

V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve

Journal of Electronic Materials 27(4), 308 (1998).

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This item is cited by the following items in the database:

  1. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  2. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by R. M. Feenstra from 128.2.24.220 on Friday, June 1, 2001 5:10:48 PM

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