Data for reference youtsey-jem-27-282

Dopant-selective photoenhanced wet etching of GaN

C. Youtsey, , G. Bulman, , I. Adesida

Journal of Electronic Materials 27(4), 282 (1998).

Demonstrate selective etching of n-type GaN over intrinsic and p-type GaN using PEC with KOH solution.

Contributed by A. T. Ping from hawk.ccsm.uiuc.edu. on Thursday, June 18, 1998 2:25:34 PM

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