Data for reference sanchezgarcia-jem-27-276

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

M.A. Sanchez-Garcia, E. Calleja, F.J. Sanchez, F. Calle, E. Monroy, D. Basak, E. Muņoz, C. Villar, A. Sanz-Hervas, M. Aguilar, J.J. Serrano, J.M. Blanco

Journal of Electronic Materials 27(4), 276 (1998).

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This item is cited by the following items in the database:

  1. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by A submitted manuscript, on Monday, July 6, 1998 11:23:11 PM
Modified by M.A. Sanchez-Garcia from pc-sanchez.die.upm.es.30.100.138.in-addr.arpa. on Friday, September 18, 1998 7:33:55 AM

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