Data for reference ping-jem-27-261

The Effects of Reactive Ion Etching-Induced Damage on the Characteristics of Ohmic Contacts to n-Type GaN

A. T. Ping, Q. Chen, J. W. Yang, M. A. Khan, I. Adesida

Journal of Electronic Materials 27, 261 (1998).

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This item is cited by the following items in the database:

  1. Room Temperature Ohmic contact on n-type GaN using plasma treatment

Contributed by A submitted manuscript, on Wednesday, February 14, 2001 12:01:08 PM

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