Data for reference lee-jem-26-898

Growth of Thick GaN Films on RF Sputtered AlN Buffer Layer by Hydride Vapor Phase Epitaxy

H Lee, M Yuri, T Ueda, JS Harris, K Sin

Journal of Electronic Materials 26(8), 898 (1997).

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This item is cited by the following items in the database:

  1. Review of polarity determination and control of GaN

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, July 20, 1997 7:20:24 AM

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