Data for reference ren-jem-26-341

Role of Interfacial-Charge in the Growth of GaN on 6H-SiC

SY Ren, JD Dow

Journal of Electronic Materials 26(4), 341 (1997).

Authors propose that the main relevant parameter for characterizing the interface and its potential for producing high-quality opto-electronic GaN or AlN films is the interfacial charge, which leads to the best films when the charge is positive and relatively large.

This item is cited by the following items in the database:

  1. Review of polarity determination and control of GaN

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:05:07 AM

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