Data for reference edwards-jem-26-334Ion Implantation Doping of OMCVD Grown GaN
A Edwards, MV Rao, B Molnar, AE Wickenden, OW Holland, PH Chi
Journal of Electronic Materials 26(3), 334 (1997).
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal
semi-insulating and n-type GaN grown on a-sapphire substrates.
Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 11:23:04 AM
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