huang-jem-26-330

Data for reference huang-jem-26-330

Improvement of Metal-Semiconductor-Metal GaN Photoconductors

ZC Huang, DB Mott, PK Shu, JC Chen, DK Wickenden

Journal of Electronic Materials 26(3), 330 (1997).

Metal-semiconductor-metal photoconductors made on GaN usually exhibit a slow response time and a low responsivity. Both response time and responsivity of the GaN detector are improved when the material is grown using increased ammonia flow rates.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 11:18:35 AM

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