Data for reference shmagin-jem-26-325

Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells

IK Shmagin, JF Muth, RM Kolbas, S Krishnankutty, S Keller, AC Abare, LA Coldren, UK Mishra, SP DenBaars

Journal of Electronic Materials 26(3), 325 (1997).

Photoluminescence (PL) characteristics of GaN/InGaN/GaN single quantum wells (QWs) and an InGaN/GaN single heterojunction were studied using continuous wave (CW) and pulsed photoluminescence in both edge and surface emitting configurations.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 11:08:04 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 6:03:55 PM.
© 1998 The Materials Research Society