Data for reference nakadaira-jem-26-320

Growth of Zinc-Blende GaN on GaAs (100) Substrates at High Temperature Using Low-Pressure MOVPE with a Low V/III Molar Ratio

A Nakadaira, H Tanaka

Journal of Electronic Materials 26(3), 320 (1997).

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Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 11:05:31 AM

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