Data for reference li-jem-26-306Characteristics of GaN Stripes Grown by Selective-Area Metalorganic Chemical Vapor Deposition
X Li, AM Jones, SD Roh, DA Turnbull, SG Bishop, JJ Coleman
Journal of Electronic Materials 26(3), 306 (1997).
The authors report on the selective-area metalorganic chemical vapor deposition of GaN stripes in the size range of 50 to 125 µm and the characterization of the morphology, topography, and optical properties of these stripes.
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