Data for reference gillis-jem-26-301Highly Anisotropic, Ultra-Smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma
HP Gillis, DA Choutov, KP Martin, MD Bremser, RF Davis
Journal of Electronic Materials 26(3), 301 (1997).
Lines 2.0 µm wide showed highly anisotropic etching: straight side walls, no overcut, no trenching, and no "pedestal" at the base of the line.
Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:50:01 AM
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