Data for reference romano-jem-26-285

Structure of GaN Films Grown by Molecular Beam Epitaxy on (0001) Sapphire

LT Romano, BS Krusor, RJ Singh, TD Moustakas

Journal of Electronic Materials 26(3), 285 (1997).

Films with a 30% higher Ga to N ratio were found to contain inversion domains (IDs). No IDs were found in films grown with a lower Ga to N ratio

This item is cited by the following items in the database:

  1. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:38:31 AM

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