lu-jem-26-281

Data for reference lu-jem-26-281

Study of Indium droplets Formation on the InGaN Films by SIngle Crystal X-ray Difraction.

H Lu, M Thothathiri, Z Wu, I Bath

Journal of Electronic Materials 26(3), 281 (1997).

Indium droplet formation during MOCVD growth of InGaN films is investigated by single crystal X-ray diffraction. A flow modulation growth technique is used to partially solve the problem opf droplet formation.

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Study of Indium droplets Formation on the InGaN Films by SIngle Crystal X-ray Difraction.

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Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:34:02 AM
Modified by W. Van der Stricht from intec.rug.ac.be. on Thursday, June 19, 1997 10:45:15 AM

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