In Situ Control of GaN Growth by Molecular Beam Epitaxy

Journal of Electronic Materials 26(3), 272 (1997).

DMS and RHEED were used to find GaN surface temperatures by measuring the condensation temperature of Ga on Ga terminated GaN. For typical GaN growth temperatures of less than 800^oC, the reproducibility of the method is better than 1^o when using a collimated DMS. Further, RHEED was used to identify different surface compositions and coverages during GaN growth and post growth annealing. DMS was demonstrated to be an accurate, nondestructive, and fast method to determine growth rates over a wide range of GaN growth conditions for GaN MBE using NH_3. Finally, using these methods, two different GaN growth regimes have been identified - Ga-limited and NH_3-limited. It has been found that Ga-limited growth gives rise to faceting, resulting in a transmission RHEED pattern. On the other hand, NH_3-limited growth results in films featuring atomic steps and a weakly reconstructed (2 x 2) RHEED pattern.

This item cites the following items in the database:

1. Progress and Prospects for GaN and the III-V Nitride Semiconductors
2. In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy
3. High quality GaN growth at high growth rates by gas-source molecular beam epitaxy
4. In situ monitoring of GaN growth using interference effects
5. Microstructure of GaN epitaxy on SiC using AlN buffer layers
6. Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
7. Growth Rate Reduction of GaN Due to Ga Surface Accumulation

This item is cited by the following items in the database:

1. The role of gaseous species in group-III nitride growth
2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
4. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
5. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
6. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by Ruediger Held from pc22.ee.umn.edu. on Monday, April 7, 1997 11:13:07 AM
Modified by Ruediger Held from pc22.ee.umn.edu. on Monday, April 7, 1997 11:13:07 AM
Modified by R. Held from pc22.ece.umn.edu. on August 22, 1997 7:29:57 PM

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