ping-jem-26-266

Data for reference ping-jem-26-266

Characterization of reactive ion etching-induced damage to n-GaN surfaces using Schottky diodes

A.T. Ping, A.C. Schmitz, I. Adesida, M.Asif Khan, Q. Chen, J.W. Yang

Journal of Electronic Materials 26(3), 266 (1997).

Dry etch-induced damage was investigated by fabricating Pd Schottky diodes on RIE etched n-GaN surfaces. Diodes characteristics such as the barrier height, ideality factor, reverse breakdown voltage, reverse leakage current, and effective Richardson coefficent were investigated as a function of DC plasma self-bias voltage and etch time. Plasma chemistries of SiCl4 and Ar were used. Rapid thermal annealing was effective in improving the diode characteristics f etched samples.

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Wednesday, April 23, 1997 4:18:41 PM

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