lee-jem-26-262

Data for reference lee-jem-26-262

Low Resistance Bilayer Nd/Al Ohmic Contacts on n-Type GaN

CT Lee, MY Yeh, YT Lyu

Journal of Electronic Materials 26(3), 262 (1997).

The values for the specify contact resistivity of 9.8 x 10^-6Ohm cm² and 8 x 10^-6Ohm cm² were obtained using Nd/Al metallization on n-type GaN (1 x 10¹⁸ cm^-3) with CTA of 250°C for 5 min and RTA of 600°C for 30 s.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:31:34 AM

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