Data for reference grudowski-jem-26-257

The Effect of Substrate Misorientation on the Optical, Structural, and Electrical Properties of GaN Grown on Sapphire by MOCVD

PA Grudowski, AL Holmes, CJ Eiting, RD Dupuis

Journal of Electronic Materials 26(3), 257 (1997).

The authors report on GaN heteroepitaxial layers grown by MOCVD on c-plane Al2O3 substrates either on-axis or intentionally misoriented 2° toward the a-plane (11-20) or 5 or 9° toward the m-plane (10-10).

This item is cited by the following items in the database:

  1. Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:23:03 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 12:54:12 PM.
© 1998 The Materials Research Society