Data for reference bi-jem-26-252Gas-Source Molecular Beam Epitaxial Growth and Characterization of InNxP1-x on InP
WG Bi, CW Tu
Journal of Electronic Materials 26(3), 252 (1997).
The authors report a study of N incorporation into InP using a radio frequency (rf) N plasma source.
Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:18:33 AM
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