Data for reference hwang-jem-26-243

Effect of Structural Defects and Chemical Impurities on Hall Mobilities in Low Pressure MOCVD Grown GaN

CY Hwang, MJ Schurman, WE Mayo, YC Lu, RA Stall, T Salagaj

Journal of Electronic Materials 26(3), 243 (1997).

The authors have studied the effect that structural defects and chemical impurities have on the electron mobility in GaN films grown in a production scale metalorganic chemical vapor depositon system.

This item is cited by the following items in the database:

  1. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:14:03 AM

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