Data for reference polyakov-jem-26-237

Growth of GaBN Ternary Solutions by Organometallic Vapor Phase Epitaxy

AY POLYAKOV, M SHIN, M SKOWRONSKI, DW GREVE, RG WILSON, AV GOVORKOV, RM DESROSIERS

Journal of Electronic Materials 26(3), 237 (1997).

Layers of Ga1-xBxN with compositions from x = 0 to x = 0.07 were grown by organometallic vapor phase epitaxy on sapphire substrates.

This item is cited by the following items in the database:

  1. Growth of Ga1-xBxN by Molecular Beam Epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 10:09:39 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 1:22:06 PM.
© 1998 The Materials Research Society