Data for reference perry-jem-26-224

Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates

W.G. Perry, T. Zheleva, M.D. Bremser, R.F Davis, W. Shan, J.J. Song

Journal of Electronic Materials 26(3), 224 (1997).

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This item is cited by the following items in the database:

  1. Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Wednesday, April 2, 1997 11:30:42 PM

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