Data for reference niebuhr-jem-26-1127

Electrical and Optical Properties of Oxygen Doped GaN Grown by MOCVD Using N2O

R Niebuhr, KH Bachem, U Kaufmann, M Maier, C Merz, B Santic, P Schlotter, H Jürgensen

Journal of Electronic Materials 26(10), 1127 (1997).

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The doped layers were n-type with carrier concentrations in the range of 4 x 1016 cm-3 to 4 x 1018 cm-3 as measured by Hall effect.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on October 4, 1997 7:13:59 AM

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