beccard-jem-26-1123

Data for reference beccard-jem-26-1123

Al-Ga-In-Nitride Heterostructures: MOVPE Growth in Production Reactors and Characterization

R Beccard, O Schoen, B Wachtendorf, D Schmitz, H Juergensen, E Woelk

Journal of Electronic Materials 26(10), 1123 (1997).

Various Al-Ga-In Nitride alloys have been grown in AIXTRON Planetary Reactors.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on October 4, 1997 7:07:34 AM

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