kobayashi-jem-26-1114

Data for reference kobayashi-jem-26-1114

Nucleation and Growth Behavior for GaN Grown on (0001) Sapphire via Multistep Growth Approach

JT Kobayashi, NP Kobayashi, PD Dapkus

Journal of Electronic Materials 26(10), 1114 (1997).

Formation and coalescence of GaN truncated three dimensional islands on (0001) sapphire are observed during growth of GaN using a close spaced metalorganic chemical vapor deposition reactor.

This item is cited by the following items in the database:

Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on October 4, 1997 7:00:43 AM

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