Data for reference ramer-jem-26-1109

Stability and Interface Abruptness of InxGa1-xN/InyGa1-yN Multiple Quantum Well Structures Grown by OMVPE

JC Ramer, D Zubia, G Liu, SD Hersee

Journal of Electronic Materials 26(10), 1109 (1997).

The abruptness of hetero-interfaces in InGaN MQW structures is shown to degrade when a high temperature growth follows growth of the MQW region, as is generally required for the growth of full device structures.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on October 4, 1997 6:38:19 AM

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