lakner-jem-26-1103

Data for reference lakner-jem-26-1103

Characterization of MOVPE-Grown (Al, In, Ga) N Heterostructures by Quantitative Analytical Electron Microscopy

H Lakner, G Brockt, C Mendorf, A Radefeld, F Scholz, V Härle, J Off, A Sohmer

Journal of Electronic Materials 26(10), 1103 (1997).

(In, Ga)N quantum wells of different thicknesses as well as superlattices were analyzed with respect to defects, chemical composition variations, interface abruptness and strain (relaxation) effects.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on October 4, 1997 6:23:59 AM

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