zolper-jem-25-839

Data for reference zolper-jem-25-839

Ion Implantation and Rapid Thermal Processing of III-V Nitrides

J. C. Zolper, M. Hagerott-Crawford, S. J. Pearton, C. R. Abernathy, C. B. Vartuli, C. Yuan, R. A. Stall

Journal of Electronic Materials 25(5), 839 (1996).

In this article, we review recent developments in implant doping and isolation along with rapid thrmal annealing of GaN and the In-containing ternary alloys InGaN and InAlN. In particular, the successful n- and p-type doping of GaN by ion implantation of Si and Mg+P, respectively and subsequent high temperature rapid thermal anneals in excess of 1000 C is reviewed. The ionization energies of implanted Si and Mg are estimated from varable temperature Hall data. In the area of implant isolation, N-implanation has been shown to compensate both n- and p-type GaN, N-, and O-implantation effectively compensated InAlN, and InGaN shows limited compensation with either N- or F-implantation.

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Ca and O ion implantation doping of GaN

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Contributed by John C. Zolper from sahp315.sandia.gov. on Monday, May 13, 1996 6:36:04 PM
Modified by S. Strite from internet-gateway-x.zurich.ibm.com. on Sunday, January 26, 1997 3:15:22 PM
Modified by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, February 11, 1997 8:19:01 AM

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