Data for reference kalinina-jem-25-831

Schottky Barriers on n-GaN Grown on SiC

EV Kalinina, NI Kuznetsov, VA Dmitriev, KG Irvine, CH Carter

Journal of Electronic Materials 25(5), 831 (1996).

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This item cites the following items in the database:

  1. Metal semiconductor field effect transistor based on single crystal GaN
  2. Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
  3. Deep level defects in n-type GaN
  4. SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates

This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures
  2. Electrical characteristics of GaN/6H-SiC n-p heterojunctions.

Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Thursday, September 19, 1996 6:16:39 AM

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