Data for reference johnson-jem-25-793

MBE Growth and Properties of GaN and AlxGa1-xN on GaN/SiC Substrates

MAL Johnson, S Fujita, WH Rowland, WC Hughes, YW He, NA El-Masry, JW Cook, JF Schetzina, J Ren, JA Edmond

Journal of Electronic Materials 25(5), 793 (1996).

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This item is cited by the following items in the database:

  1. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 12:14:05 PM

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