Data for reference yuan-jem-25-749

Effect of Shroud Flow on High Quality InxGa1-xN Deposition in a production Scale Multi-wafer Rotating Disk reactor

C. Yuan, T. Salagaj, W. Kroll, R.A. Stall, M. Schurman, C.Y. Hwang, Y. Li, W.E. Mayo, Y. Lu, S. Krishnankutty, R.M. Kolbas

Journal of Electronic Materials 25(4), 749 (1996).

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This item is cited by the following items in the database:

  1. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

Contributed by Alan G. Thompson from 9.4.100.1 on Tuesday, June 4, 1996 11:13:30 AM

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