Data for reference lilientalweber-jem-25-1545

Structural Characterization of Bulk GaN crystals Grown Under High Hydrostatic Pressure

Z. Liliental-Weber, C. Kisielowski, S. Ruvimov, Y. Chen, J. Washburn, I. Grzegory, M. Bockowski, J. Jun, S. Porowski

Journal of Electronic Materials 25(9), 1545 (1996).

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This item is cited by the following items in the database:

  1. Recent Results in the Crystal Growth of GaN at High N2 Pressure
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. Polarization and band offsets of stacking faults in AlN and GaN
  4. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  5. Review of polarity determination and control of GaN

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