Data for reference chen-jem-25-1004

A study of parasitic reactions between NH3 and TMGa or TMAl

C. H. Chen, H. Liu, D. Steigerwald, W. Imler, C. P. Kuo, M. G. Craford, M. Ludowise, S. Lester, J. Amano

Journal of Electronic Materials 25(6), 1004 (1996).

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This item is cited by the following items in the database:

  1. MOVPE Growth and Structural Characterization of AlxGa1-xN
  2. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  3. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by A submitted manuscript, on Wednesday, July 16, 1997 3:27:34 PM

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