Data for reference kennedy-jem-24-219

Native defects and dopants in GaN studied through photoluminescence and optically detected magnetic resonance

T. A. Kennedy, E. R. Glaser, J. A. Freitas, W. E. Carlos, M. Asif Khan, D. K. Wickenden

Journal of Electronic Materials 24, 219 (1995).

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This item is cited by the following items in the database:

  1. Yellow Band and Deep levels in Undoped MOVPE GaN.

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