Data for reference hong-jem-24-213

Epitaxial Growth of Cubic GaN on (111) GaAs by Metalorganic Chemical Vapor Deposition

CH Hong, K Wang, D Pavlidis

Journal of Electronic Materials 24(4), 213 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 1:15:51 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 1:34:43 PM.
© 1998 The Materials Research Society