Data for reference niebuhr-jem-24-1531

Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers

R Niebuhr, K Bachem, K Dombrowski, M Maier, W Pletschen, U Kaufmann

Journal of Electronic Materials 24(11), 1531 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Crystalline Structure changes in GaN Films Grown at Different Temperatures

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 1:36:36 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 5:35:20 PM.
© 1998 The Materials Research Society